http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102545053-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 |
| filingDate | 2011-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c5f4d5b8c54c8cff9a6323b09171cbf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90136e5f663327ae24bb6a944779d001 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f564bdfdbaa99bed38818a6f73caddd |
| publicationDate | 2013-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102545053-B |
| titleOfInvention | Visible electric pumping random laser device with adjustable wavelength and preparation method thereof |
| abstract | The invention discloses a visible electric pumping random maser device adjustable wavelength and a preparation method thereof. The preparation method of the device comprises the following steps of: depositing a CdZno film on a substrate by adopting a sputtering method, and carrying out rapid thermal treatment under inert gas atmosphere; depositing an SiO2 film on the CdZnO film by adopting a sol-gel method; depositing a semitransparent Au electrode on the SiOe film by adopting the sputtering method, and depositing an ohmic contact electrode on the back of the substrate. According to the invention, the CdZnO film is adopted as a main material, and rapid thermal treatment is carried out on the CdZno film after the deposition of the CdZnO film, and finally the electric pumping random maser device with the Au/SiO2/CdZno MIS structure is prepared. Under certain forward bias, the device can send out electric pumping random maser waves positioned in a visible area; and according to differentrapid thermal treatment temperatures, the center wavelength of the random mastering bands is within the range of 485nm-430nm and is adjustable. The device has a simple structure and is easy to realize; and facilities adopted in the preparation process are compatible with the existing mature process of silicon devices. |
| priorityDate | 2011-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.