http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102544096-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0a6df6844944a1e86c15955ae218d12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| filingDate | 2010-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60b74eb88939e41c52488a0ddfb1c925 |
| publicationDate | 2014-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102544096-B |
| titleOfInvention | Metal oxide semiconductor device and forming method thereof |
| abstract | The invention relates to a metal oxide semiconductor structure and a forming method thereof, in particular to the forming method of a complementary metal oxide semiconductor device. The forming method disclosed by the invention has the advantages that, (1) the performances of the semiconductor device are improved by forming a semiconductor layer which has different crystal orientation with a substrate on the surface of the substrate and improving carrier mobility by utilizing stress generated in the semiconductor layer with the different crystal orientation; (2) the carrier mobility is improved by forming the semiconductor layer which has the different crystal orientation with the substrate on the surface of the substrate, forming an NMOS (negative-channel metal oxide semiconductor) on the crystal surface of orientation (100) and forming a PMOS (positive-channel metal oxide semiconductor) on the crystal surface of orientation (110); (3) the leakage current problem in the conventional process is avoided by substituting a high-k gate dielectric for a traditional silicon dioxide gate dielectric; and (4) the forming method has simple process and low cost. |
| priorityDate | 2010-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.