http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102539029-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d9de52bba13e16028dffa8775e3f3f28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L1-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00 |
| filingDate | 2012-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47a9458d6089b5e9bdef05f193516eff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b0efb03ab2165c3cd4eaefa9f3bc16b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_527a7e7f853162ae0ce0382392daee93 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_289fb009a96c1cf14570e501e2d8f0b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f8a50a1b8359fa9e1b18eb2373aa63d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fdfbbbdfae05da99b4bdd1348f6082f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7edc107a6673a26600d15b26bad66732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b78758f75245e9fcba5a04e138a5384f |
| publicationDate | 2013-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102539029-B |
| titleOfInvention | Three-dimensional fluid stress sensor based on flexible MEMS (microelectromechanical system) technology and array thereof |
| abstract | The invention discloses a three-dimensional fluid stress sensor based on a flexible MEMS (microelectromechanical system) technology and an array thereof. The three-dimensional fluid stress sensor based on the flexible MEMS technology comprises a capacitive pressure stress sensor and a hot shearing stress sensor, wherein the capacitive pressure stress sensor comprises an upper electrode plate in an upper electrode layer, a pressure stress-sensitive film, and a lower electrode plate in a lower electrode layer; a cavity structure of the pressure stress sensor is formed in a supporting structurallayer; the hot shearing stress sensor consists of four groups of double hot-wire resistors which are in a square arrangement; and a hot-wire resistance signal is led from a flexible substrate into a detection circuit through a wire leading post. The three-dimensional fluid stress sensor is based on a flexible substrate technology and a back wire leading technology, and adopts an MEMS processing technology and a bonding technology; the magnitude of the pressure stress of a fluid is measured through the change of a capacitive signal; the magnitude and the direction of a two-dimensional shearingstress within a plane are measured through the change of the double hot-wire resistance; the capacitive signal and a shearing stress signal are led into the detection circuit and do not interfere with each other; and the three-dimensional fluid stress sensor based on the flexible MEMS technology has the advantages of relatively high resolution, small volume, and batch processing at low cost. |
| priorityDate | 2012-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.