http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102522434-B

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06c87200cf96acdabeae38cd1101927d
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0749
filingDate 2011-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3659b06e35874f09eb077fa56c96a790
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37749219e53bc156050f14ca2e506271
publicationDate 2015-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102522434-B
titleOfInvention Copper-indium-gallium-selenium film photovoltaic cell device and preparation method thereof
abstract The invention relates to a copper-indium-gallium-selenium film photovoltaic cell device and a preparation method thereof. The copper-indium-gallium-selenium film photovoltaic cell device comprises a substrate, a back electrode layer, a copper-indium-gallium-selenium photoabsorption layer, a buffering layer, a blocking layer, a conducting window layer and a grid electrode, which are sequentially overlapped with each other, wherein the grid electrode is a p type or n type graphene film. The nearly transparent graphene film is utilized as the grid electrode of a CIGS film photovoltaic cell device, the most remarkable advantage thereof is light transmission, and a single layer of graphene only absorbs 2.3% of light, and the graphene is completely light tight compared with the commonly utilized Ni/Al grid electrode, so that the effective light acceptance area of the photovoltaic cell device is increased, the short circuit current is raised and the cell efficiency is improved as well.
priorityDate 2011-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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