http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102491252-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
| filingDate | 2011-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_875898d7b52964628f6e0e7a262a3680 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c758c2ec60368671d0349492afde86fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e693bbf89f585cbc81db86b113801b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_181838c28076724068cb76c7776d474c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_895ed1da40efe1a95112b6be87018df7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2a9520df0cba9c2bb07ef3f1b202786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0ebf5d1b6aacd093c263e66c8045f05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80746d80067b5b51e74e66a9b5922023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa38477fa6dc11fb5655ce5733471aa5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c41bb57fb9be4c18d4bc1dd46b88fa2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97df3739e948730c2be093a1b6599a41 |
| publicationDate | 2014-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102491252-B |
| titleOfInvention | Selective arrangement method of discrete nano-material |
| abstract | A selective arrangement method of a discrete nano-material comprises steps of: 1) oxidizing a clean substrate, typically a silicon substrate, to obtain a layer of oxide of silicon on a surface of the substrate; 2) placing the oxidized silicon chip into a C6-C8 hydrocarbon solution of octadecyl trichlorosilane and growing a layer of nonpolar OTS self-assembly monomolecular film; 3) etching the nonpolar OTS self-assembly monomolecular film selectively on an objective zone of the substrate by utilizing laser through phase raster; 4) placing the etched silicon substrate in a methanol solution of 3-triethoxy silicyl-1-propylanmine to grow a polar APS self-assembly monomolecular film on the zone etched by the laser and form a polar and nonpolar interval area; and 5) immersing the modified substrate into a nano wire or nano-material fluid suspension and lifting, so as to arrange the nano wire or nano-material according to a rule in the objective polar zone and realize selective arrangement of a discrete semiconductor nano wire. The method has application value. |
| priorityDate | 2011-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.