http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102479730-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f823f036721e39c61ff0ced537273b8 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2010-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91e9c512ff4605c35f890ce03c7b69f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edc1fdcb24d6836b95615854957e49e4 |
| publicationDate | 2014-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102479730-B |
| titleOfInvention | Method for monitoring concentrations of doped impurities of doped epitaxial layer |
| abstract | The invention provides a method for monitoring the concentrations of doped impurities of a doped epitaxial layer. The method comprises the following steps of: providing a semiconductor substrate and forming an epitaxial structure on the semiconductor substrate, wherein the epitaxial structure at least comprises the doped epitaxial layer; forming a protection layer on the epitaxial structure; providing a refractive index standard curve and an absorbance standard curve of standard epitaxial layers with different doped impurity concentrations, wherein the thickness of each standard epitaxial layer is the same as that of the doped epitaxial layer; obtaining a refractive index curve and an absorbance curve of the doped epitaxial layer; respectively comparing the refractive index curve and the absorbance curve with the refractive index standard curve and the absorbance standard curve, taking the doped impurity concentrations relative to the refractive index standard curve and the absorbance standard curve which are matched with the refractive index curve and the absorbance curve as the concentrations of the doped impurities of the doped epitaxial layer. According to the invention, the stability of an epitaxial layer deposition process is improved. |
| priorityDate | 2010-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.