http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102479705-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-735 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1008 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 2011-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102479705-B |
| titleOfInvention | Semiconductor device and the method be used for producing the semiconductor devices |
| abstract | The method that the present invention relates to semiconductor device and be used for producing the semiconductor devices.According to embodiment, provide a kind of method be used for producing the semiconductor devices.The method comprises provides mask layer, and when when formation doped region, this mask layer is as injecting mask and when the contact element formed in formation opening and opening, this mask layer is used as etching mask.Contact element contacts with doped region. |
| priorityDate | 2010-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.