http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102479688-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f823f036721e39c61ff0ced537273b8 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate | 2010-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f753e5af3474867dd6313800903c226e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54b99c23a6f1c2de410326535267043f |
| publicationDate | 2013-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102479688-B |
| titleOfInvention | Method of wafer surface photoresistance edge removal |
| abstract | The invention provides a method of wafer surface photoresistance edge removal in the semiconductor manufacture technology field. The method comprises the following steps: acquiring a minimum linewidth of the semiconductor device made of wafer; when the minimum linewidth of the semiconductor device is larger than 90 nm, employing an edge bead removal (EBR) method or/and a wafer edge exposure (WEE) method with a diaphragm aperture length of a first fixed length and a diaphragm aperture width of a first fixed width to remove photoresistance of a first width at a wafer edge; when the minimum linewidth of the semiconductor device is less than or equal to 90 nm, carrying out at least the following steps: employing a wafer edge exposure (WEE) method with a diaphragm aperture length of a second fixed length and a diaphragm aperture width of a second fixed width to remove the photoresistance of a second width at the wafer edge, wherein, the first fixed width is larger than the second fixed width. According to the invention, through turning down an aperture value in the WEE method, a Rainbow defect area decreases from 200 micrometers to 50 micrometers, thus a Rainbow defect has no influence on performance of the semiconductor device, and the method has the advantages of simpleness and low cost. |
| priorityDate | 2010-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.