http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102468217-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f823f036721e39c61ff0ced537273b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e3d8364bf64e4ac6e1a9cd5df2bd54 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2010-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b261c516b7f03fb0a2cdc67848ddb3c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49dabc09716c236f800f6b5c553a8660 |
| publicationDate | 2014-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102468217-B |
| titleOfInvention | Method for forming contact hole |
| abstract | The invention discloses a method for forming a contact hole. The method comprises the following steps of: providing a semiconductor substrate, forming a metal oxide semiconductor (MOS) transistor on the semiconductor substrate, forming a first barrier layer and a dielectric layer sequentially, and covering the MOS transistor and the semiconductor substrate, wherein the etching selection ratio of the first barrier layer to the dielectric layer is more than or equal to 10; etching the dielectric layer, forming a first opening, a second opening and a third opening above a gate, a source and a drain of the MOS transistor respectively, wherein the first barrier layer is exposed out of the bottoms of the first opening, the second opening and the third opening; and removing the first barrier layer at the bottoms of the first opening, the second opening and the third opening. According to the method, the gate can be prevented from being damaged in the process of contact hole forming, and the performance of a device can be improved. |
| priorityDate | 2010-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.