http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102446811-B

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d0a3d10ed9477633fd2c07c6da61dc49
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2010-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_671ab83ae7c616c8d986a07c5f5456a3
publicationDate 2014-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102446811-B
titleOfInvention Metal interconnecting structure and methods for forming metal interlayer through holes and interconnecting metal wire
abstract The invention discloses a method for forming metal interlayer through holes, a method for forming an interconnecting metal wire and a metal interconnecting structure. The method for forming the metal interlayer through holes comprises the following steps of: forming a seed crystal layer on a first dielectric layer and a first metal layer, wherein the first metal layer is embedded into the first dielectric layer; forming a mask diagram on the seed crystal layer, wherein the mask diagram exposes a part of the seed crystal layer, and the exposed seed crystal layer covers a part of the first metal layer; growing a second metal layer on the exposed seed crystal layer; removing the mask diagram and the seed crystal layer which bears the mask diagram to expose the side wall of the second metal layer, a part of the first metal layer and the first dielectric layer; and forming a barrier layer on the side wall, the part of the first metal layer and the first dielectric layer. The method for forming the interconnecting metal wire can reduce holes. The metal interconnecting structure comprises a contact plug, through holes and the interconnecting metal wire, wherein the through holes are formed in the interconnecting metal wire, a metal grid and/or the contact plug.
priorityDate 2010-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5357696
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419577479
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID66241
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419531083
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978

Total number of triples: 23.