http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102420107-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81ca9a5f1da06521982d5a6b55b04244 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-92 |
| filingDate | 2011-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_083e559db531e343628fe837b2abfee3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40a0f9a652f3ee7518aab5f275a9a66d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f1e6298dde043c4ded0cf609874b1ef http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30ee16df64569669ae8ffdf61b18a366 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed9cf9212415dfc2e63c717a028fed19 |
| publicationDate | 2013-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102420107-B |
| titleOfInvention | Copper Damascus process MIM (metal-insulator-metal) capacitor manufacturing process and structure |
| abstract | The invention relates to a copper Damascus process and a structure, and particularly relates to a copper Damascus process MIM (metal-insulator-metal) capacitor manufacturing process and structure. According to the copper Damascus process MIM capacitor structure and the manufacturing process thereof provided by the invention, a single Damascus process is utilized to manufacture MIM double-layer capacitor and an inductor simultaneously, and an dielectric barrier layer is removed in the manufacturing processes of a second electrode and a third electrode; and a dielectric layer made of a high-dielectric material is deposited again so as to serve as a metal insulating layer. According to the technical scheme of the invention, the manufactured MIM double-layer capacitor structure can be completely compatible with a CMOS (complementary metal-oxide-semiconductor transistor) logic circuit and an inductive copper Damascus process, and the density of the MIN capacitor is increased. |
| priorityDate | 2011-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.