http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102412284-B

Outgoing Links

Predicate Object
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
filingDate 2011-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2014-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102412284-B
titleOfInvention Vertical parasitic positive-negative-positive (PNP) triode in SiGe heterojunction bipolar transistor (HBT) process and manufacturing process thereof
abstract The invention discloses a vertical parasitic positive-negative-positive (PNP) triode in a SiGe heterojunction bipolar transistor (HBT) process. A slot which is contacted with a base region is formed in shallow slot field oxides around the base region, and the depth of the slot is less than or equal to that of the base region; polycrystalline silicon which is doped with N-type impurities is filled in the slot and forms an external base region; the external base region and the base region are contacted on the side of the base region; and metal contact is formed on the external base region and a base is led out. The invention also discloses a manufacturing method for the vertical parasitic PNP triode in the SiGe HBT process. The vertical parasitic PNP triode can be used as an output device in a high-speed and high-gain HBT circuit, one more device choice is provided for a circuit, the device area can be effectively reduced, the parasitic effect of the device can be reduced, the collector resistance of a PNP tube is reduced and the performance of the device is improved; and in the method, extra process conditions are not needed and production cost can be reduced.
priorityDate 2011-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.