http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102379028-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2010-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102379028-B |
| titleOfInvention | Etching solution |
| abstract | The invention provides a kind of etching solution, its by containing hydrofluoric acid (A), ammonium fluoride (B), by have higher than the pKa of hydrofluoric acid (pKa=3.17) acid (C1) and there is the salt (C) and water (D) that the alkali (C2) higher than the pKa of ammonia (pKa=9.24) obtains, it is little that evaporation etc. with liquid forms change, the exchange frequency of liquid is low, even and if through also etching silicon oxide layer equably for a long time. |
| priorityDate | 2009-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 77.