http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102364682-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 |
| filingDate | 2011-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102364682-B |
| titleOfInvention | Vertical double-diffused MOS transistor testing structure and formation method, method of testing |
| abstract | A kind of vertical double-diffused MOS transistor testing structure and formation method, detection method, described test structure specifically comprises: Semiconductor substrate, and described Semiconductor substrate has first area and the second area relative with described first area; Be positioned at the groove of the Semiconductor substrate of described first area, in described groove, fill full epitaxial loayer; Be positioned at the grid structure of described epi-layer surface, be positioned at the gate electrode on grid structure surface; Be positioned at the first source region of the epitaxial loayer of described grid structure both sides and second source region relative with described first source region; Be positioned at the source electrode of described first source region and the second area surface; Be positioned at the leakage test electrode of the semiconductor substrate surface of described second area.Only need when testing owing to utilizing described vertical double-diffused MOS transistor testing structure to measure with test probe, do not need to utilize test chuck and drain electrode electrical contact, improve certainty of measurement. |
| priorityDate | 2011-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID104737 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419576148 |
Total number of triples: 14.