http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102354545-B

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72319bdd443422574f04403bac2a07fd
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224
filingDate 2011-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e8695cdb49c32d880fa04ecde74d150
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4a2858070d8253bb2da64e383622e3e
publicationDate 2013-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102354545-B
titleOfInvention Sliver electrode slurry for back electric field of silicon solar cell and preparation method thereof
abstract The invention discloses sliver electrode slurry for a back electric field of a silicon solar cell and a preparation method thereof, and the silver electrode slurry for the back electric field of the silicon solar cell comprises the following components by weight percent: 60-70% of spherical silver powder, 0-5% of flaky silver powder, 2-6% of glass powder with a high-temperature softening point, 1-3% of glass powder with a low-temperature softening point and 20-30% of organic bonding agent. The particle size of the spherical silver powder is 0.5-2.5 mu m, and the tap density is above 4.5g/ml; the particle size of the flaky silver powder is below 5 mu m, and the tap density is above 4.0g/ml; and the glass powder with the high-temperature softening point is a PbO3-B2O3-SiO2-ZnO glass system, and the glass powder with the low-temperature softening point is a Bi2O3-B2O3-SiO2 glass system. The slurry is applied to a sliver electrode of the back electric field of the silicon solar cell; furthermore, after fast high-temperature sintering by a chained belt furnace, the adhesive capability is strong, the soldering resistance is good and the photoelectric conversion efficiency of a product is high.
priorityDate 2011-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5363271-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24832091
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426260387
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23954
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523117
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23995
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557109
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID31272
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559021
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123

Total number of triples: 25.