http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102353887-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e74277852f1aae0a3ff13f59a65456d |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2011-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7a807aea16733034c44a4e18f0cd6de http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e68f1bfe553b8eea3bcbb94e3062fea9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b42956670aec81c07adfec1592fec933 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21a85d3b3d236dd5cc9a1627d495fd50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01c77c759a8b1941d115ad32cd51d32a |
| publicationDate | 2013-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102353887-B |
| titleOfInvention | Method for measuring interface thermal resistance of micro-nanoscale circular boundary |
| abstract | The invention discloses a method for measuring interface thermal resistance of a micro-nanoscale circular boundary. In the method, an auxiliary device structure is designed; the auxiliary device structure comprises a cylindrical inner core, and a first round ring and a second round ring which are wrapped outside the inner core; and the circular boundary formed by the first round ring and the second round ring is an equivalent interface of the interface to be tested, the influence of crystal orientation, the size and the like are uniformly considered, and the equivalent interface thermal resistance is taken, so that the related calculation of an interface thermal effect is simplified, and a simple model is built to study the thermal effect. By changing the materials of the first round ring and the second round ring, the interface thermal resistance of circular boundaries made of different materials can be measured. According to the obtained equivalent thermal resistance, the influence of the thermal effect on circular gate devices can be subjected to modeling analysis. |
| priorityDate | 2011-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.