http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102347368-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2011-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102347368-B |
| titleOfInvention | Transistor, method of manufacturing transistor, and electronic device including transistor |
| abstract | A transistor, a method of manufacturing the transistor, and an electronic device including the transistor are provided. The transistor may include an oxide channel layer having a multi-layer structure. The channel layer may include a first layer and a second layer that are sequentially arranged from a gate insulation layer. The first layer may be a conductor, and the second layer may be a semiconductor having a lower electrical conductivity than that of the first layer. The first layer may become a depletion region according to a gate voltage condition. |
| priorityDate | 2010-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.