| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e071d18fea054bf8d1420d483e78ed1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C237-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C257-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-06 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F1-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C257-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2003-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecb7acc3945ce9374ea4f58ef088bc8c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21d1ded2de5f927ebddf35b28a78b3e1 |
| publicationDate |
2014-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-102344460-B |
| titleOfInvention |
Atomic layer deposition using metal amidinates |
| abstract |
Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films are deposited on heated substrates by the reaction of alternating amounts of N,N'-diisopropylacetamidine copper(I) and hydrogen gas. Thin films of cobalt metal are deposited on heated substrates by the reaction of alternating amounts of N,N'-diisopropylacetamidine cobalt(II) and hydrogen. Nitrides and oxides of this metal can be formed by replacing hydrogen with ammonia or water vapor, respectively. The film in the fine pores has a very uniform thickness and good step coverage. Suitable applications include the electrical connection of magnetoresistors in microelectronic devices and in magnetic information storage devices. |
| priorityDate |
2002-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |