http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102320824-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f74630d1eee9f20251db4cc0a6fe5072 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-46 |
filingDate | 2011-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2013-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f1011323295cff80e82b1d0717412a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37d41f4d456ae854474546ddd1314d99 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33080aeca93d9d5e3dc5cecaa5579e2b |
publicationDate | 2013-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-102320824-B |
titleOfInvention | Method for preparing metal ion-doped titanium dioxide target material and target material thereby |
abstract | The invention relates to a method for preparing a metal ion-doped titanium dioxide target material and a target material thereby. The target material is prepared by adopting the steps of preparing metal ion-doped titanium dioxide powder through a solution reaction and compressing and sintering. The preparation process is simple and is easy to realize uniform doping of one or more metal ions; the doping amount of the ions can be precisely controlled, and the metal ions can enter a titanium dioxide crystal lattice in the preparation process to generate chemical bonding; the average crystal granularity of titanium dioxide in the prepared target material is below 200 nano, and the target material has high density; and the target material can be used for preparing a metal ion-doped titanium dioxide nano film by adopting a magnetron sputtering method. |
priorityDate | 2011-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.