http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102320824-B

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f74630d1eee9f20251db4cc0a6fe5072
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-46
filingDate 2011-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f1011323295cff80e82b1d0717412a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37d41f4d456ae854474546ddd1314d99
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33080aeca93d9d5e3dc5cecaa5579e2b
publicationDate 2013-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102320824-B
titleOfInvention Method for preparing metal ion-doped titanium dioxide target material and target material thereby
abstract The invention relates to a method for preparing a metal ion-doped titanium dioxide target material and a target material thereby. The target material is prepared by adopting the steps of preparing metal ion-doped titanium dioxide powder through a solution reaction and compressing and sintering. The preparation process is simple and is easy to realize uniform doping of one or more metal ions; the doping amount of the ions can be precisely controlled, and the metal ions can enter a titanium dioxide crystal lattice in the preparation process to generate chemical bonding; the average crystal granularity of titanium dioxide in the prepared target material is below 200 nano, and the target material has high density; and the target material can be used for preparing a metal ion-doped titanium dioxide nano film by adopting a magnetron sputtering method.
priorityDate 2011-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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