http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102286760-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D21-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2011-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102286760-B |
| titleOfInvention | Fill method, aqueous solution electroplating bath solution, electroplating device and the system of the large-scale recessed features of high aspect ratio with electrochemical metal |
| abstract | Offer electrochemical metal of the present invention fills the method for the large-scale recessed features of high aspect ratio, aqueous solution electroplating bath solution, electroplating device and system.The large-scale recessed features of a kind of copper electricity filling high aspect ratio and place do not deposit the method for a large amount of copper.Described method allow with substantially void-free mode be filled up completely with aspect ratio be at least about 5: 1, for example, at least about 10: 1 and width be at least about the recessed features of 1 μm, simultaneously in place the copper of deposition less than 5% (relative to the thickness of deposition in recessed features).Described method includes making to have the substrate of the large-scale recessed features (such as TSV) of one or more high aspect ratios and contacts with the electrolyte of the organic bifurcation inhibitor (DSI) comprising copper ion and being configured to suppress copper to deposit in place, with acid copper under the conditions of control of Electric potentials, the wherein critical potential less than DSI for the controlling potential. |
| priorityDate | 2010-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 89.