http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102265405-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2009-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102265405-B |
| titleOfInvention | Stability in metal oxide semiconductor films transistor strengthens |
| abstract | The plasma hydrogenation region that the present invention relates in the dielectric layer of semiconductor thin-film transistor (TFT) structure improves the stability of TFT.TFT is the sandwich construction comprising electrode, be arranged on the dielectric layer on electrode and the metal-oxide semiconductor (MOS) on dielectric layer.Before deposited semiconductor, dielectric layer is exposed to and makes to produce plasma hydrogenation region on semiconductor-dielectric interface containing hydrogen plasma.Plasma hydrogenation region is incorporated to hydrogen, and in from semiconductor/dielectric interface to the body of the one or both described dielectric layer and described semiconductor layer, the concentration of hydrogen reduces. |
| priorityDate | 2008-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.