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filingDate 2009-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102257384-B
titleOfInvention Electronic sensor for nitric oxide
abstract It is disclosed that the semiconductor device (1) for measuring the NO concentration in fluid (breath such as breathed out).This device (1) typically comprises a pair and is spaced apart with the electrode (18) of restriction channel region (16) in organic semiconductor (14), for controlling door (10) and the receptive layers (22) of the most overlapping described channel region of described channel region, described receptive layers includes porphin or phthalocyanine complex complex, it includes III XII group 4 transition metal ion or lead (Pb) ion, for complexation NO.This semiconductor device can sense the NO concentration of ppb scope.
priorityDate 2008-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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