http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102246267-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2009-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102246267-B |
| titleOfInvention | Be laminated with the manufacture method of the composite base plate of wide band gap semiconducter |
| abstract | The invention provides and a kind of manufacture the method for low cost in conjunction with wafer (8), the method the bulk crystals of wide band gap semiconducter (1) can be made to try one's best to be transferred to treatment substrate (3) upper and do not destroy substrate for unfertile land.The method manufactures in conjunction with wafer (8) by forming wide-band gap semiconductor thin film layer (4) on the surface for the treatment of substrate (3), and the method comprises the following steps: from have more than 2.8eV band gap wide band gap semiconducter (1) surface (5) inject ion to form ion implanted layer (2); Surface activation process is carried out at least one surface in the described surface of described treatment substrate (3) or the described ion implantation surface (5) of described wide band gap semiconducter (1); Combination (6) is obtained in conjunction with the described surface (5) of described wide band gap semiconducter (1) and the described surface of described treatment substrate (3); Described combination (6) is carried out to the heat treatment of 150 DEG C-400 DEG C; And irradiate visible ray from the described ion implanted layer (2) of wide band gap semiconducter (1) described in described semiconductor substrate (1) side direction of described combination (6), to make the interface of described ion implanted layer (2) brittle, then described wide-band gap semiconductor thin film layer (4) is transferred on described treatment substrate (3). |
| priorityDate | 2008-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.