http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102244196-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2011-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2625a695eb69e52cd52193cee4920fbd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd8213d7b6de71402139db2f2ad0d5fa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_becf7af5af3ac76f2012cbf51c6ac084 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0db488faf0635916a63b83bb2c08686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_227ce4fca5ef8e737e1928e5adb261df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d28eab077b462939885bc3b0ed3557f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14be2110a7b6d9b88b917b681e0f279f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6518226221a8ade6c2315c618841f548 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba35d93193686283dcd2356c2e001890 |
| publicationDate | 2013-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102244196-B |
| titleOfInvention | Sequential controllable nanometer silicon quantum dot array resistive random access memory and preparation method thereof |
| abstract | The invention relates to a sequential controllable nanometer silicon quantum dot array resistive random access memory and a preparation method thereof, and belongs to the technical field of non-volatile memories. The resistive random access memory comprises P and a silicon substrate material, and is characterized by also comprising a resistive silicon quantum dot multilayer film nanometer column array attached to the substrate material and an upper electrode and a lower electrode which are attached to the upper surface of the resistive silicon quantum dot multilayer film nanometer column array and the lower surface of the substrate; an insulating medium layer is arranged in the resistive multilayer film nanometer column array; and a silicon quantum dot multilayer film nanometer column is formed by at least two layers of silicon-enriched silicon nitride films which are inlaid with nanometer silicon quantum dots and have different nitrogen components or a silicon-enriched silicon oxide film sublayer which is inlaid with the nanometer silicon quantum dots and has different oxygen components. The sequential controllable nanometer silicon quantum dot array resistive random access memory can be compatible with the current micro-electronic process technology, and can show the advantage of sequential controllable nanometer silicon in resistive random access memory materials to fulfill the aim of improving the switch ratio and stability of the resistive materials, so that nanometer silicon quantum dots are applied in silica-based nanometer memories in future. |
| priorityDate | 2011-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.