http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102237418-B

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1836
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filingDate 2011-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102237418-B
titleOfInvention The cadmium sulfide layer used based on the film photovoltaic device of cadmium telluride and manufacture method thereof
abstract Name of the present invention is called " cadmium sulfide layer that the film photovoltaic device based on cadmium telluride uses and manufacture method thereof ".Generally provide Cadimium telluride thin film photovoltaic device 10.Device 10 can comprise substrate 12, the transparent conducting oxide 14 on substrate 12; Resistance transparent buffer layer 16 on transparent conducting oxide 14; Cadmium sulfide layer 18 on resistance transparent buffer layer 16; Cadmium-telluride layer 20 on cadmium sulfide layer 18; And, the back contact 22 on cadmium-telluride layer 20.Cadmium sulfide layer 18 can comprise the oxygen in the molar percentage being greater than 0% to about 20%.In a specific embodiment, substantially do not have the second cadmium sulfide layer 19 of oxygen can between cadmium sulfide layer 18 and cadmium-telluride layer 20.Also generally provide the method depositing cadmium sulfide layer 18 on the substrate 12 and the method manufacturing Cadimium telluride thin film photovoltaic device 10.
priorityDate 2010-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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