http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102210032-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2009-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1fe5f13e65186e286a1be1541d05dd5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8fd80b85d4317f6c9d3fe2bb98f7bca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03dd722098c33439466f4776c4433039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7333a4b482cd816cffd1417253b242d1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_320a3783bdf5f6dcf1032965ec31ac44 |
| publicationDate | 2014-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102210032-B |
| titleOfInvention | Method for producing a radiation-emitting thin-film component and radiation-emitting thin-film component |
| abstract | In at least one embodiment of the method for producing a radiation-emitting thin-film component (1), said method comprises the following steps: - providing a substrate (2), - applying nanorods (3) to the substrate (2) by epitaxial growth, - epitaxially growing a semiconductor layer sequence (4) comprising at least one active layer (5) onto the nanorods (3), - applying a carrier (6) onto the semiconductor layer sequence (4), and - separating the semiconductor sequence (4) and carrier (6) from the substrate (2) by at least partially destroying the nanorods (3). By using such a production method, mechanical stresses and cracks in the semiconductor layer sequence (4) resulting from the epitaxial growth can be reduced. |
| priorityDate | 2008-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.