| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1836 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate |
2011-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2016-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-102208484-B |
| titleOfInvention |
The forming method of the conductive transparent oxide film layer used by film photovoltaic device based on cadmium telluride |
| abstract |
Present invention generally provides the method forming conductive oxide layer (14) on matrix (12).In a specific embodiment, described method may be included in the sputtering atmosphere target (such as comprising cadmium stannate) comprising cadmium and sputters including transparent conducting oxide layer (14) on matrix (12).Can be sputter temperature sputter including transparent conducting oxide layer (14) of about 100 DEG C to about 600 DEG C.The present invention also generally provides the method preparing film photovoltaic device (10) based on cadmium telluride. |
| priorityDate |
2010-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |