http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102191476-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3970ff2929243c84b2f197df598b9c59 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-02 |
| filingDate | 2011-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec97b1cec50b97651fc62ecb89e72ea9 |
| publicationDate | 2014-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102191476-B |
| titleOfInvention | Method for preparing sulfur-doped graphene films |
| abstract | The invention relates to a method for preparing sulfur-doped graphene films. The sulfur-doped graphene films are prepared with chemical vapor deposition. The method comprises the following steps: a metal substrate is put in a reactor and preheated in heating and reduction protective atmosphere, then the metal substrate is heated to 900-1000 DEG C, the reduction protective gas is stopped to blow in the reactor, the vacuum degree of the reactor reaches 10-2 Torr to 10-3 Torr, then mixed liquid carbon source and sulfur source are introduced into the reactor in gas state, the required sulfur-doped grapheme films are grown on the metal substrate, a post-treatment is carried out, and the sulfur-doped graphene films are transferred to a substrate material. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3376214-A4 |
| priorityDate | 2011-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.