http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102185062-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d94573ab2c57e8b193f3a22accddf9fe |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
| filingDate | 2011-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_043ca21aad83f54f4c16e4ae994f27ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77ea8ec309fd7ee8999b3469b927df38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93e3fd675ce75bea0963494e7a51e31c |
| publicationDate | 2014-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102185062-B |
| titleOfInvention | III-group nitride light-emitting diode (LED) and manufacturing method thereof |
| abstract | The invention discloses a III-group nitride light-emitting diode (LED) and a manufacturing method thereof. The LED comprises a substrate and a semiconductor epitaxial laminate which is laminated on the substrate, wherein the semiconductor epitaxial laminate sequentially comprises an N type layer, a luminescent layer and a P type layer from top to bottom. The LED is characterized in that: an N type layer table face is formed in the N type layer by etching a part of the semiconductor epitaxial laminate; an N type electrode is arranged on the N type layer table face; a P type electrode is arranged on the upper surface of the un-etched part of the P type layer; the N type layer also comprises a uniformly doped layer of which the doping concentration is consistent and a modulation doped layer of which the doping concentration is changeable; and the modulation doped layer is arranged between the uniformly doped layer and the luminescent layer. A doped mode of the modulation doped layer is gradual transition doping which connects uniformly doped layer and the luminescent layer of which the doping concentration is consistent. The concentration change trend is decrease progressively change from the uniformly doped layer to the luminescent layer. By the LED and the manufacturing method, the crystal quality and the luminance uniformity can be obviously improved, and the lighting effect is improved. |
| priorityDate | 2011-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.