http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102184887-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2011-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102184887-B |
| titleOfInvention | For the formation method of flash memory fleet plough groove isolation structure |
| abstract | A kind of for improving the formation method of the fleet plough groove isolation structure of flash memory " smiling face " effect, comprising: provide Semiconductor substrate, described semiconductor substrate surface is formed with tunnel oxide and floating gate polysilicon layer successively; Form hard mask layer on described floating gate polysilicon layer surface, and etch described hard mask layer, floating gate polysilicon layer, tunnel oxide, Semiconductor substrate successively, in described Semiconductor substrate, form shallow trench; Situ steam generating process is adopted to form the cushion oxide layer covering described shallow trench surface; Chemical vapor deposition is adopted to form the spacer medium layer of filling full described shallow trench." smiling face " problem of the floating gate tunneling oxide that traditional handicraft is brought effectively can be improved by the formation method of the fleet plough groove isolation structure for flash memory provided by the present invention, improve programming and the efficiency of erasing of flash memory, increase the read current under flash memory erases state, thus reach the object increasing window memory. |
| priorityDate | 2011-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.