| abstract |
The present invention relates to a compound for an organic thin film transistor and an organic thin film transistor using the same, and provides a compound for an organic thin film transistor having a structure of the following formula (1). In the formula (1), R 1 to R 6 are respectively a hydrogen atom, a halogen atom, an alkyl group with 1 to 30 carbon atoms, a halogenated alkyl group with 1 to 30 carbon atoms, and an alkane with 1 to 30 carbon atoms. Oxygen, halogenated alkoxy with 1 to 30 carbon atoms, alkylthio with 1 to 30 carbon atoms, halogenated alkylthio with 1 to 30 carbon atoms, alkylamino with 1 to 30 carbon atoms , dialkylamino groups with 2 to 60 carbon atoms (the alkyl groups can be bonded to each other to form a ring structure containing nitrogen atoms), alkylsulfonyl groups with 1 to 30 carbon atoms, Haloalkylsulfonyl, aromatic hydrocarbon group with 6 to 60 carbon atoms, aromatic heterocyclic group with 3 to 60 carbon atoms, alkylsilyl group with 3 to 20 carbon atoms, 5 carbon atoms ~60 alkylsilylethynyl groups or cyano groups, each of which may have a substituent, wherein R 1 to R 6 are not hydrogen atoms at the same time. |