http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102171830-B

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filingDate 2009-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34637bd2f224aeca291bd7c6253251b9
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publicationDate 2015-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102171830-B
titleOfInvention Normally-off semiconductor devices and methods of fabricating the same
abstract Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form a trench. The trench extends through the barrier layer and exposes a portion of the buffer layer. A dielectric layer is formed on the spacer layer and in the trench and a gate electrode is formed on the dielectric layer. Related methods of forming semiconductor devices are also provided herein.
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priorityDate 2008-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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