| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01Q1-2225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01Q1-248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-0715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-0701
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-0723 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01Q23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 |
| filingDate |
2009-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1bb34dac01fe786ce9ad2399c77187b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dc058bb59017b8a9bcf55bcd324bc03 |
| publicationDate |
2014-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-102171811-B |
| titleOfInvention |
Semiconductor device |
| abstract |
The semiconductor device includes an antenna 101, a rectifier circuit 102, a first protection circuit 107, and a second protection circuit 108. The antenna 101 generates AC voltage. The rectifier circuit 102 rectifies the AC voltage and generates internal voltage Vin. The first protection circuit 107 includes a first diode 201 and a second diode 202. The second protection circuit 108 includes a capacitor 203 and a transistor 204. In the case where the absolute value of the AC voltage generated in the antenna 101 is larger than a certain value, the first protection circuit 107 cuts the surplus. The second protection circuit 108 functions in the case where the level of the internal voltage Vin generated in the rectifier circuit 102 is high. By changing resonant frequency, the second protection circuit 108 can decrease the number of signals input to the semiconductor device. |
| priorityDate |
2008-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |