http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102163553-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78672 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78678 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2011-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102163553-B |
| titleOfInvention | Manufacture the method for thin-film transistor |
| abstract | Manufacture the method for the thin-film transistor with high electrical characteristics with disclosing a kind of high production rate.In the method for the channel region for the formation of double gate thin-film transistor, wherein this double gate thin-film transistor comprise first grid electrode and towards first grid electrode second gate electrode and channel region is arranged on therebetween, first microcrystalline semiconductor film is formed under the first condition for the formation of the microcrystalline semiconductor film with amorphous semiconductor filling intercrystalline space, and the second microcrystalline semiconductor film is being formed under promoting the second condition of crystal growth on the first microcrystalline semiconductor film. |
| priorityDate | 2010-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.