http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102142520-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| filingDate | 2011-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102142520-B |
| titleOfInvention | Thin-film transistor and manufacture method thereof and electronic installation |
| abstract | The present invention relates to thin-film transistor and manufacture method thereof and electronic installation.Thin-film transistor comprises: organic semiconductor layer; And source electrode and drain electrode, source electrode and drain electrode spaced and be set to respectively with organic semiconductor ply.Organic semiconductor layer comprises: bottom organic semiconductor layer; And top organic semiconductor layer, be formed on the organic semiconductor layer of bottom, and the dissolubility had higher than bottom organic semiconductor layer and conductivity.Bottom organic semiconductor layer extends to the region overlapping with drain electrode from the region overlapping with source electrode, and top organic semiconductor layer is separately positioned in each region in the region overlapping with source electrode and the region overlapping with drain electrode, to make each top organic semiconductor layer spaced. |
| priorityDate | 2010-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.