http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102140013-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dad4939916e84343a67dd912097668bd |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-34 |
| filingDate | 2010-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc41f9a190a21b1bf0e23c35214991a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec71e9f644d1766fe8f9e863c6b89b12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d160b49e6f87c73c6454d9645b6285d4 |
| publicationDate | 2014-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102140013-B |
| titleOfInvention | Method for preparing TiO2 porous film with gradient forbidden band |
| abstract | The invention belongs to the technical field of film preparation, in particular relates to a method and relative process parameters for preparing a TiO2 porous film with a gradient forbidden band. The preparation method is a sol gel/template assembly method and comprises the following steps: firstly, preparing a series of sol with different doping amounts of metal element V (introduced by ammonium metavanadate) based on tetrabutyl titanate (Ti(OC4H9)4) as a precursor, surfactant polyethylene glycol (PEG2000) as a template and diethanol amine as a solvent; then successively coating the sol with the different doping amounts on indium tin oxide (ITO) conductive glass by using a dip-coating process, and changing the metal doping amounts so as to achieve the continuous variation of the width of the forbidden band; and finally, calcining to remove the PEG2000 template so as to obtain the TiO2 porous film with the gradient forbidden band. Simultaneously, in the invention, the influences of the process parameters on the structure and property of the film are also discussed so that the optimum process parameters for preparing the high-property TiO2 porous film the forbidden band width of which is gradient from 3.28eV to 2.82eV are obtained, wherein the process parameters comprise sol precursor concentration, V doping amount, PEG2000 addition amount, dipping time and the like. |
| priorityDate | 2010-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.