http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102138217-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a916e03e9b9d6e2e9655219cd75abb5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2009-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1deb172162a011d64a5adfefbb5829f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_537b6cd1915d470b0df1358b96dda910 |
| publicationDate | 2013-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102138217-B |
| titleOfInvention | Power MOSFET with a gate structure of different material |
| abstract | A semiconductor device includes a semiconductor layer of a first conductivity type and a first doping concentration. A first semiconductor region, used as drain, of the first conductivity type has a lower doping concentration than the semiconductor layer and is over the semiconductor layer. A gate dielectric (109) is over the first semiconductor region. A gate electrode (405) over the gate dielectric has a metal-containing center portion (407) and first and second silicon portions (401, 403) on opposite sides of the center portion. A second semiconductor region, used as a channel, of the second conductivity type has a first portion under the first silicon portion and the gate dielectric. A third semiconductor region, used as a source, of the first conductivity type is laterally adjacent to the first portion of the second semiconductor region. The metal-containing center portion, replacing silicon, increases the source to drain breakdown voltage. |
| priorityDate | 2008-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.