| abstract |
Provided is a field effect transistor wherein at least a gate electrode, a gate insulating film, a semiconductor layer, a protection layer for the semiconductor layer, a source electrode, and a drain electrode are disposed on a substrate. The source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is provided between the gate electrode and the semiconductor layer, and the protection layer is provided at least on one surface of the semiconductor layer. The semiconductor layer is composed of an oxide containing In atoms, Sn atoms, and Zn atoms, and the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atm% or more but not more than 75 atm%, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atm%. |