http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102130057-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f823f036721e39c61ff0ced537273b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e3d8364bf64e4ac6e1a9cd5df2bd54 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate | 2010-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c3e79935e5e01f541747b8664809b6a |
| publicationDate | 2013-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102130057-B |
| titleOfInvention | Method for making complementary metal oxide semiconductor device, and structure of complementary metal oxide semiconductor device |
| abstract | The invention discloses a method for making a complementary metal oxide semiconductor device. The method can be used for making a complementary metal oxide semiconductor device provided with a double lining layer and a bimetal front dielectric layer, and optimizes the overall performance of the semiconductor device. The invention also discloses a complementary metal oxide semiconductor device which is provided with a double lining layer and a bimetal front dielectric layer. The complementary metal oxide semiconductor device has an obvious effect on improving the carrier mobility. |
| priorityDate | 2010-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.