| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c7dab7088d2c6b4c6336479f6fca2787 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02499
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1602
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02444
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-187 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 |
| filingDate |
2010-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5831d7dec69a1bd588ea76f596bea97 |
| publicationDate |
2013-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-102097461-B |
| titleOfInvention |
Substantially lattice matched semiconductor materials and associated methods |
| abstract |
The invention relates to substantially lattice matched semiconductor materials and associated methods. Semiconductor devices having atomic lattice matching template interlayers are provided. In one aspect, a semiconductor device can include a first semiconductor material, a second semiconductor material disposed on the first semiconductor material, and an atomic template interlayer disposed between the first semiconductor material and the second semiconductor material, the atomic template interlayer bonding together and facilitating a substantial lattice matching between the first semiconductor material and the second semiconductor material. |
| priorityDate |
2009-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |