http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102089927-B
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_203c4e4b9677c902919ad91d5fbb585e |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2031 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M14-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
filingDate | 2009-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2013-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_323c281688f6e5d206c2f55883a7a412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9649f1b07edf18c4eed7f9e71113f3ef |
publicationDate | 2013-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-102089927-B |
titleOfInvention | Dye-sensitized solar cell and method for manufacturing same |
abstract | Disclosed is a dye-sensitized solar cell wherein an improved photoelectric conversion efficiency is realized by suppressing reverse electron transfer and improving conductivity of electrodes. Corrosion of electrodes by an electrolyte solution is greatly suppressed in the dye-sensitized solar cell. A method for manufacturing the dye-sensitized solar cell is also disclosed. The dye-sensitized solar cell comprises: an anode electrode wherein a conductive base containing at least a metal collector grid and a semiconductor porous film layer to which a sensitizing dye is adsorbed are arranged on a light-transmitting substrate; a cathode electrode so arranged as to face the semiconductor porous film layer of the anode electrode; and an electrolyte sealed between two electrode pieces, namely between the anode electrode and the cathode electrode. The dye-sensitized solar cell is characterized in that an intermediate layer is arranged between the conductive base and the semiconductor porous film layer and the intermediate layer has a water vapor transmission rate of not more than 0.1 g/(m224h). |
priorityDate | 2008-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 267.