| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B13-143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2973 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate |
2009-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a93ea00e77166a1ed9820a679aaae2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d90632c705400cfb8dc51499e4f53c44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_412d1b17f565a84a0a053d0198eadfd7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_feaff63875c4d7d76cc78d65eff5ec45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d5522eae19262c99e8ba9a01f82aacc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7078e772182c72b5f2be029eb733830
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9481fd145a193db4a15b0415d01964d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35c6e66d6ee9d7b287e474de79ad320e |
| publicationDate |
2013-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-102084039-B |
| titleOfInvention |
Process for production of AlxGa(1-x)N single crystal, AlxGa(1-x)N single crystal, and optics |
| abstract |
A process for the production of an AlXGa(1-X)N single crystal (10) (wherein 0XGa(1-X)N single crystal by a sublimation method, which comprises the step of preparing a substrate having the same compositional ratio (x) as that of the AlXGa(1-X)N single crystal, the step of preparing a high-purity raw material, and the step of sublimating the raw material to grow an AlXGa(1-X)N single crystal on the substrate. The AlXGa(1-X)N single crystal (10) exhibits an absorption coefficient of 100cm-1 or below for a light having a wavelength of 250nm to shorter than 300nm and an absorption coefficient of 21cm-1 or below for a light having a wavelength of 300nm to shorter than 350nm, each absorption coefficient being determined at 300K. |
| priorityDate |
2008-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |