http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102073004-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e74277852f1aae0a3ff13f59a65456d |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2009-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e0c4a6c96aec83eac22e4df1db9c826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fc31d3baf42d98437fb900c540408b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_551cfaf1ea109ef05f5288b3ca35d867 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2e719bf68da63d44ec2f804bdbcaf87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef1ef9ef9cde7ceff8469485e6073b40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35be517cadbe04d06b5bdb15d25cfa59 |
| publicationDate | 2013-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102073004-B |
| titleOfInvention | Method for testing reliability of semiconductor devices |
| abstract | The invention discloses a method for testing reliability of semiconductor devices which have negative bias temperature instability (NBTI). The method comprises the following steps: measuring the NBTI curve of a first set of semiconductor devices; measuring the 1/f noise power spectral density and drain current of the first set of semiconductor devices at a predetermined frequency under the condition that the first set of semiconductor devices is biased in a gate electric field; measuring the equivalent oxide layer thickness of the gate dielectric of the first set of semiconductor devices; measuring the 1/f noise power spectral density and drain current of a second set of semiconductor devices at the predetermined frequency under the condition that the second set of semiconductor devices is biased in the gate electric field; measuring the equivalent oxide layer thickness of the gate dielectric of the second set of semiconductor devices; and evaluating the deterioration characteristic of the second set of semiconductor devices by using the NBTI curve of the first set of semiconductor devices. The method disclosed by the invention saves the time required for testing the reliability of a large number of semiconductor devices, and can not damage the second set of semiconductor devices. |
| priorityDate | 2009-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.