http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102044569-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e3d8364bf64e4ac6e1a9cd5df2bd54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f823f036721e39c61ff0ced537273b8 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-92 |
| filingDate | 2009-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edbab975f6e8aac0eece0d4a049fe082 |
| publicationDate | 2013-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102044569-B |
| titleOfInvention | Capacitor and manufacturing method thereof |
| abstract | The invention relates to a capacitor and a manufacturing method thereof. The capacitor comprises a first electrode, a first dielectric layer positioned on the first electrode, a silicon nanocrystal positioned on the first dielectric layer, a second dielectric layer positioned on the silicon nanocrystal and the first dielectric layer which is not covered by the silicon nanocrystal and a second electrode positioned on the second dielectric layer. The manufacturing process of the capacitor is based on the traditional technology and is simple. By using the silicon nanocrystal, the invention increases the capacitance of the capacitor. |
| priorityDate | 2009-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.