http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102044474-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e3d8364bf64e4ac6e1a9cd5df2bd54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f823f036721e39c61ff0ced537273b8 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23G1-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2009-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2adb5909ae63d86339ea4ea3ca6c7d90 |
| publicationDate | 2015-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102044474-B |
| titleOfInvention | Surface treatment method of copper metal layer subjected to chemically mechanical polishing |
| abstract | The invention relates to a surface treatment method of a copper metal layer subjected to chemically mechanical polishing, which comprises the steps of: providing a semiconductor substrate, wherein a dielectric layer is arranged on the surface of the semiconductor substrate, an opening is formed in the dielectric layer, metal copper is filed in the opening; carrying out chemically mechanical polishing on the semiconductor substrate until the metal copper in the opening is level to the surface of the dielectric layer; cleaning the dielectric layer and the surface of the metal copper with an alkali preparation; preprocessing surface plasma on the dielectric layer and the surface of the metal copper; and forming an etching stopping layer on the dielectric layer and the surface of the metal copper. Through simple regulation of the process, the invention avoids oxidization of the surface of the copper and the diffusion of copper ions in the dielectric layer, repairs the crystal lattice and the surface state of the dielectric layer to be a certain extent, improves the electric performance parameters of breakdown voltage, TDDB (Time Dependent Dielectric Breakdown), and the like, and enhances the element performances. |
| priorityDate | 2009-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.