http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102036907-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd446fb0d73aa96d044fea2eaa3c8ebc |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-017 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R19-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R31-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00888 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0042 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
| filingDate | 2009-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8df6caf3043d2c1e4d8720b0f332744c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d39e78ab43a8928b123460941902fde6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_431e2bceb77f740ec4ee1f676cb5d821 |
| publicationDate | 2014-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102036907-B |
| titleOfInvention | Method for the production of separate micromechanical parts arranged on a silicon substrate, and parts made therewith |
| abstract | A method for producing separate micromechanical parts arranged on a silicon substrate (1) encompasses the following steps: a) separation trenches (7) are formed on the substrate by means of a deep anisotropic plasma etching process; b) the zone (9, 12) of the silicon substrate (1) that forms the bottom of separation trenches (6) is irradiated with laser light (11) such that the silicon substrate (1) changes from a crystalline state into an at least partially amorphous state in said zone (9, 12); c) mechanical stresses are induced in the substrate (1). In one embodiment, caverns (2) are etched at the same time as the separation trenches (6) are etched. The etching depths can be controlled using the RIE lag effect. |
| priorityDate | 2008-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.