| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2010-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b13489e435f389495276522bd7f7d998
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e05fe2aa3803c33e846efdf0c2a421c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82cbb36ca0a2b5b4900aa7fd7c39e57c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09876f29da0c2cc843c761182d1a7753
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_920043375e6a3edff5b62c7897e928f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afd305f31f83d911bbaf4cc6a496dd79 |
| publicationDate |
2015-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-102034861-B |
| titleOfInvention |
Power electronic devices, methods of manufacturing the same, and integrated circuit modules including the same |
| abstract |
Power electronic devices including 2-dimensional electron gas (2DEG) channels and methods of manufacturing the same. A power electronic device includes lower and upper material layers for forming a 2DEG channel, and a gate contacting an upper surface of the upper material layer. A region below the gate of the 2DEG channel is an off region where the density of a 2DEG is reduced or zero. The entire upper material layer may be continuous and may have a uniform thickness. A region of the upper material layer under the gate contains an impurity for reducing or eliminating a lattice constant difference between the lower and upper material layers. |
| priorityDate |
2009-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |