| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac39f2b350f9ca20552b16c240220b8b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26566
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J27-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2003-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9708fb0bfb203bba90c75abaed8adb90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_320cf2a8d71831915e0fcdb842cde75c |
| publicationDate |
2014-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-102034665-B |
| titleOfInvention |
An ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
| abstract |
An ion implantation device and a method of manufacturing a semiconductor device are described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form: BnHx <+> and BnHx <->, wherein 10<=n<=100 and 0<=x<=n+4. |
| priorityDate |
2002-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |