http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102002047-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0cb011d981829bdcc85a40133a181da8 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D487-22 |
filingDate | 2010-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2013-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b35b8803dc267a8a2d8e5bba118f939 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe2a33353829d567f80bc5bd9883b59d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45583f658d6a9896566fc06aaba62b4b |
publicationDate | 2013-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-102002047-B |
titleOfInvention | Phthalocyanine compound and organic thin film transistor |
abstract | The embodiments of the invention disclose a phthalocyanine compound and an organic thin film transistor, having functions of introducing an alkyl group to each of the four benzene rings surrounding the phthalocyanine nucleus for improving dissolubility, wherein the four benzene rings are located at non-periphery positions so as to reduce the influence of the alkyl group to the arrangement of the phthalocyanine nucleus in the thin film to a minimum degree, thereby achieving a high field effect drift mobility; furthermore, the central ligand metal atoms titanium or vanadium can adjust an electronic structure of the tetra-alkyl substituted phthalocyaninem, a synergistic effect of the alkyl group and the central ligand metal atoms regulates the stacking manner of the tetra-alkyl substituted phthalocyaninem thin-film so that a rigid plane of the phthalocyaninem molecule in the semiconductor layer of the organic thin-film transistor is vertical to a substrate. The phthalocyaninem provided by the invention enriches the varieties of the phthalocyaninem and gets the organic thin-film transistor with higher drift mobility. Experiment shows that drift mobility of the current carrier of the semiconductor layer of the organic thin-film transistor reaches to 0.2 cm<2>/V.s. |
priorityDate | 2010-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.