http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101910431-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0173cf4e989efeee0acebbf0ba851b1e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B59-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B9-228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B9-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B59-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate | 2008-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27349d9d0cfb3725bbb09bd6761d9da3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0568c7c66a83b5b6fac21c7738727a5d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ce1718c9e07fec5b2ea666d86f56a5e |
| publicationDate | 2015-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-101910431-B |
| titleOfInvention | Highly pure lanthanum, sputtering target comprising highly pure lanthanum, and metal gate film mainly composed of highly pure lanthanum |
| abstract | Disclosed is highly pure lanthanum which has a purity of 4 N or more as determined by excluding any rare earth element or any gaseous component therefrom, and which contains aluminum, iron and copper each in an amount of 100 wt ppm or less. Also disclosed is highly pure lanthanum, which has a purity of 4 N or more as determined by excluding any rare earth element or any gaseous component therefrom, which contains aluminum, iron and copper each in an amount of 100 wt ppm or less, which contains oxygen in an amount of 1500 wt ppm or less, which contains an alkali metal element and an alkali earth metal element each in an amount of 1 wt ppm or less, which contains a transition metal element and a high-melting-point metal element other than those mentioned above each in an amount of 10 wt ppm or less, and which contains a radioactive element in an amount of 10 wt ppb or less. Further disclosed is a technique for efficiently and stably providing highly pure lanthanum, a sputtering target comprising a highly pure lanthanum material and a metal gate thin film mainly composed of a highly pure lanthanum material. |
| priorityDate | 2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.